EB201D datasheet(4/8 Pages) ONSEMI

Part #	EB201D

Description	High Cell Density MOSFETs Low On-Resistance Affords New Design Options

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EB201/D

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Table 1. Current Handling Capability and Junction Temperature Comparison

Devices

Max RDS(on) @ 255C (mW)

Max Current (Amps)

Junction Temperature (

5C)

HDTMOS TO–220

10

21(1)

150(2)

STD TO–220

21

15(1)

180(2)

HD DPAK on FR4

45

3.6(3)

125(4)

STD DPAK on FR4

100

2.2(3)

185(4)

HD D2PAK on FR4

10

7.1(5)

125(6)

STD D2PAK on FR4

21

5.0(5)

185(6)

HD D2PAK on Thermal Clad

®

10

15.3(7)

125(8)

STD D2PAK on Thermal Clad

21

10.7(7)

185(8)

HD 8–Pin SOIC (1 of 2 Die)

64

2.2(9)

125(10)

STD 8–Pin SOIC (1 of 2 Die)

132

1.6(9)

185(10)

1. Largest die available in a TO–220, RΘJC = 1.0°C/W, RΘCA = 5.0°C/W, Tamb = 125°C, Tmax = 175°C.

2. Largest die available in a TO–220, RΘJC = 1.0°C/W, RΘCA = 5.0°C/W, Tamb = 125°C, Id = 15.5 A.

3. Largest die available in a DPAK, RΘJC = 3.12°C/W, RΘCA = 50°C/W, Tamb = 85°C, Tboard = 125°C max.

4. Largest die available in a DPAK, RΘJC = 3.12°C/W, RΘCA = 50°C/W, Tamb = 85°C, Id = 3.6 A.

5. Largest die available in a D2PAK, RΘJC = 1.0°C/W, RΘCA = 50°C/W, Tamb = 85°C, Tboard = 125°C max.

6. Largest die available in a D2PAK, RΘJC = 1.0°C/W, RΘCA = 50°C/W, Tamb = 85°C, Id = 7.1 A.

7. Largest die available in a D2PAK, RΘJC = 1.0°C/W, RΘCA = 10°C/W, Tamb = 85°C, Tboard = 125°C max.

8. Largest die available in a D2PAK, RΘJC = 1.0°C/W, RΘCA = 10°C/W, Tamb = 85°C, Id = 15.3A.

9. Largest die available in an 8–pin SOIC, RΘJC = 5.0°C/W, RΘCA = 75°C/W, Tamb = 85°C, Tboard = 125°C max.

10. Largest die available in an 8–pin SOIC, RΘJC = 5.0°C/W, RΘCA = 75°C/W, Tamb = 85°C, Id = 2.2 A.

Behavior of Intrinsic Diode

The switching characteristics of the MOSFET’s body

diode are very important in systems such as PWM (pulse

width modulated) motor controllers that use it as a

freewheeling, or commutating diode. Of particular interest

are the diode’s reverse recovery characteristics, which play

a major role in determining radiated and conducted noise as

well as switching losses.

As a minority carrier device, the body diode takes a finite

time, trr, to switch from forward conducting to reverse

blocking due to the storage of minority carrier charge, Qrr.

A typical waveform showing Qrr, trr, ta, and tb is shown in

Figure 5. Qrr, trr, ta, and tb are a function of the forward

current and the rate at which the diode is switched, or applied

di/dt. The abruptness or snappiness of diode recovery is best

described by the ratio tb/ta. A ratio of 1 is considered ideal

and values less than 0.5 are considered snappy. Another key

characteristic to note is that the diode will not support

reverse voltage until the peak reverse recovery current is

reached. It is these above mentioned characteristics that

determine commutation losses and noise.

Because the diode will not support voltage until the peak

reverse recovery current is reached, the transistor that is

turning on and diverting current from the diode (usually the

transistor in the opposite leg of a 1/2 bridge) takes the brunt

of the commutation losses. The diode incurs little power

dissipation until the relatively brief tb time. Obviously,

repeatedly forcing the diode through reverse recovery

increases transistor power dissipation. Therefore, in PWM

applications one would like a diode with short trr and low Qrr

to minimize these losses.

Figure 5. Diode Reverse Recovery Comparison

Qrr

MTP50N06E

MTP75N05HD

trr

ta

tb

0

IDIODE

20 ns/DIV

di/dt = 100 A/microsecond, lfm = 25 A

Cutting switching losses is easily accomplished by

boosting switching speeds; however, the repercussions of

this strategy must be carefully considered. Sharpening the

switching edges generates more electrical noise. The

mechanisms at work are finite irremovable parasitic

inductances and capacitances acted upon by high di/dt’s and

dv/dt’s. The diode’s negative di/dt during ta is directly

controlled by the transistor clearing the stored charge.

However, the positive di/dt during tb is more dependent on

the diode itself, the maximum reverse recovery current, and

parasitic circuit elements. The abrupt edges during tb induce

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