DAN222 datasheet(2/4 Pages) ONSEMI

Part #	DAN222

Description	Common Cathode Silicon Dual Switching Diode

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Manufacturer	ONSEMI [ON Semiconductor]

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DAN222

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ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristic

Symbol

Condition

Min

Max

Unit

Reverse Voltage Leakage Current

IR

VR = 70 V

−

0.1

mAdc

Forward Voltage

VF

IF = 100 mA

−

1.2

Vdc

Reverse Breakdown Voltage

VR

IR = 100 mA

80

−

Vdc

Diode Capacitance

CD

VR = 6.0 V, f = 1.0 MHz

−

3.5

pF

Reverse Recovery Time

trr(2)

IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR

−

4.0

ns

2. trr Test Circuit on following page.

TYPICAL ELECTRICAL CHARACTERISTICS

100

0.2

0.4

VF, FORWARD VOLTAGE (VOLTS)

0.6

0.8

1.0

1.2

10

1.0

0.1

10

0

VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.001

10

20

30

40

50

Figure 1. Forward Voltage

Figure 2. Reverse Current

Figure 3. Diode Capacitance

TA = 150°C

TA = 125°C

TA = 85°C

TA = 55°C

TA = 25°C

TA = 85°C

TA = −40°C

TA = 25°C

1.0

0

0.9

0.8

0.7

0.6

24

6

8

VR, REVERSE VOLTAGE (VOLTS)

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