© Semiconductor Components Industries, LLC, 2006

September, 2006 − Rev. 4

1

Publication Order Number:

BAV99LT1/D

BAV99LT1

Dual Series

Switching Diode

Features

Rating

Symbol

Value

Unit

Reverse Voltage

70

Vdc

Forward Current

215

mAdc

Peak Forward Surge Current

500

mAdc

Repetitive Peak Reverse Voltage

70

V

Average Rectified Forward Current (Note 1)

(averaged over any 20 ms period)

715

mA

Repetitive Peak Forward Current

450

mA

Non−Repetitive Peak Forward Current

t = 1.0

ms

t = 1.0 ms

t = 1.0 s

2.0

1.0

0.5

A

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation

Alumina Substrate (Note 2)

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

417

°C/W

Junction and Storage

Temperature Range

−65 to

+150

°C

1. FR− 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in 99.5% alumina.

Device

Package

ORDERING INFORMATION

CASE 318

SOT−23

STYLE 11

BAV99LT1

SOT−23

3000/Tape & Reel

MARKING DIAGRAM

A7

= Specific Device Code

M

= Date Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

1

2

3

3

CATHODE/ANODE

ANODE

1

CATHODE

2

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BAV99LT3G

SOT−23

(Pb−Free)

10,000/Tape & Reel

BAV99LT1G

SOT−23

(Pb−Free)

3000/Tape & Reel

BAV99LT3

SOT−23

10,000/Tape & Reel

http://onsemi.com

1

A7 M

G

G