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TIP102 Datasheet(PDF) 2 Page - STMicroelectronics |
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TIP102 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.56 62.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEO Collector Cut-off Current (IB = 0) VCE = 50 V 50 µA ICBO Collector Cut-off Current (IE = 0) VCB = 100 V 50 µA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 8 mA VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0) IC = 30 mA 100 V VCE(sat)* Collector-Emitter Saturation Voltage IC = 3 A IB = 6 mA IC = 8 A IB = 80 mA 2 2.5 V V VBE* Base-Emitter Voltage IC = 8 A VCE = 4 V 2.8 V hFE* DC Current Gain IC = 3 A VCE = 4 V IC = 8 A VCE = 4 V 1000 200 20000 VF* Forward Voltage of Commutation Diode (IB = 0) IF = - IC = 10 A 2.8 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area TIP102 / TIP107 2/4 |
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