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IS61LV2568-10KI Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc |
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IS61LV2568-10KI Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc |
4 / 9 page IS61LV2568 ISSI® 4 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 02/07/03 DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol Parameter Test Conditions Min. Max. Unit VOH Output HIGH Voltage VDD = Min., IOH = –4.0 mA 2.4 — V VOL Output LOW Voltage VDD = Min., IOL = 8.0 mA — 0.4 V VIH Input HIGH Voltage(1) 2.0 VDD + 0.3 V VIL Input LOW Voltage(1) –0.3 0.8 V ILI Input Leakage GND ≤ VIN ≤ VDD Com. –1 1 µA Ind. –5 5 ILO Output Leakage GND ≤ VOUT ≤ VDD, Outputs Disabled Com. –1 1 µA Ind. –5 5 Note: 1. VIL(min) = –0.3V (DC); VIL(min) = –2.0V (pulse width - 2.0 ns). VIH(max) = VDD + 0.3V (DC); VIH(max) = VDD + 2.0V (pulse width - 2.0 ns). CAPACITANCE(1,2) Symbol Parameter Conditions Max. Unit CIN Input Capacitance VIN = 0V 6 pF CI/O Input/Output Capacitance VOUT = 0V 8 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V. POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -10 ns -12 ns Symbol Parameter Test Conditions Min. Max. Min. Max. Unit ICC VDD Operating VDD = Max., CE = VIL Com. — 125 — 110 mA Supply Current IOUT = 0 mA, f = Max. Ind. — 135 — 120 ISB1 TTL Standby VDD = Max., Com. — 40 — 35 mA Current VIN = VIH or VIL Ind. — 50 — 45 (TTL Inputs) CE ≥ VIH, f = max ISB2 CMOS Standby VDD = Max., Com. — 10 — 10 mA Current CE ≥ VDD – 0.2V, Ind. — 20 — 20 (CMOS Inputs) VIN ≥ VDD – 0.2V, or VIN ≤ 0.2V, f = 0 Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. |
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