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STSJ100NHS3LL Datasheet(PDF) 5 Page - STMicroelectronics |
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STSJ100NHS3LL Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 12 page STSJ100NHS3LL Electrical characteristics 5/12 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=15V, ID=10A, RG=4.7Ω, VGS=4.5V (see Figure 12) 16 45 ns ns td(off) tf Turn-off delay time Fall time VDD=15V, ID=10A, RG=4.7Ω, VGS=4.5V (see Figure 12) 68 8 ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 20 80 A A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=5A, VGS=0 0.75 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=20A, di/dt = 100A/µs, VDD=25V, Tj=150°C (see Figure 17) 30 30 2 ns nC A |
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