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STS20NHS3LL Datasheet(PDF) 3 Page - STMicroelectronics |
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STS20NHS3LL Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 12 page STS20NHS3LL Electrical ratings 3/12 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage ±16 V ID (1) 1. This value is rated accordingly to Rthj-pcb Drain current (continuous) at TC = 25°C 20 A ID Drain current (continuous) at TC=100°C 12.6 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 80 A PTOT Total dissipation at TC = 25°C 2.7 W TJ Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 2. Thermal data Symbol Parameter Value Unit Rthj-pcb (1) 1. When mounted on 1 inch² FR-4 board, 2oz Cu. (t<10sec.) Thermal resistance junction-pcb max 47 °C/W Table 3. Avalanche data Symbol Parameter Value Unit IAV Avalanche current, not repetitive (pulse width limited by Tjmax) 10 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAV, VDD=24V) 1.8 J |
Similar Part No. - STS20NHS3LL_07 |
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Similar Description - STS20NHS3LL_07 |
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