BUK543-100B datasheet(2/8 Pages) PHILIPS

Part #	BUK543-100B

Description	PowerMOS transistor Logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product Specification

PowerMOS transistor

BUK543-100A/B

Logic level FET

STATIC CHARACTERISTICS

T

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA

100

-

V

voltage

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 1 mA

1.0

1.5

2.0

V

I

DSS

Zero gate voltage drain current

V

DS = 100 V; VGS = 0 V; Tj = 25 ˚C

-

1

10

µA

I

DSS

Zero gate voltage drain current

V

DS = 100 V; VGS = 0 V; Tj =125 ˚C

-

0.1

1.0

mA

I

GSS

Gate source leakage current

V

GS = ±15 V; VDS = 0 V

-

10

100

nA

R

DS(ON)

Drain-source on-state

V

GS = 5 V;

BUK543-100A

-

0.17

0.18

Ω

resistance

I

D = 5 A

BUK543-100B

-

0.20

0.22

Ω

DYNAMIC CHARACTERISTICS

T

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

g

fs

Forward transconductance

V

DS = 25 V; ID = 5 A

6.0

8.0

-

S

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

620

825

pF

C

oss

Output capacitance

-

180

250

pF

C

rss

Feedback capacitance

-

90

120

pF

t

d on

Turn-on delay time

V

DD = 30 V; ID = 3 A;

-

10

20

ns

t

r

Turn-on rise time

V

GS = 5 V; RGS = 50 Ω;

-

45

60

ns

t

d off

Turn-off delay time

R

gen = 50 Ω

-

90

115

ns

t

f

Turn-off fall time

-

40

55

ns

L

d

Internal drain inductance

Measured from drain lead 6 mm

-

4.5

-

nH

from package to centre of die

L

s

Internal source inductance

Measured from source lead 6 mm

-

7.5

-

nH

from package to source bond pad

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

Repetitive peak voltage from all

R.H.

≤ 65% ; clean and dustfree

-

1500

V

three terminals to external

heatsink

C

isol

Capacitance from T2 to external f = 1 MHz

-

12

-

pF

heatsink

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

DR

Continuous reverse drain

-

8.3

A

current

I

DRM

Pulsed reverse drain current

-

33

A

V

SD

Diode forward voltage

I

F = 8.3 A ; VGS = 0 V

-

1.1

1.3

V

t

rr

Reverse recovery time

I

F = 8.3 A; -dIF/dt = 100 A/µs;

-

80

-

ns

Q

rr

Reverse recovery charge

V

GS = 0 V; VR = 30 V

-

0.5

-

µC

April 1993

2

Rev 1.100

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