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STS5PF30L Datasheet(PDF) 4 Page - STMicroelectronics |
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STS5PF30L Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 12 page Electrical characteristics STS5PF30L 4/12 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS = 0 30 V IDSS Zero gate voltage Drain current (VGS = 0) VDS = Max rating 1 µA VDS=Max rating, TC=125°C 10 µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 16V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 1 1.6 2.5 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 2.5A VGS = 4.5V, ID = 2.5A 0.045 0.065 0.055 0.075 Ω Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5. Forward transconductance VDS= 15V, ID =2.5A 10 S Ciss Input capacitance VDS = 25V, f = 1 MHz, VGS = 0 1350 pF Coss Output capacitance 490 pF Crss Reverse transfer capacitance 130 pF Qg Total gate charge VDD = 24V, ID = 5A, VGS = 5V (see Figure 14) 12.5 16 nC Qgs Gate-source charge 5 nC Qgd Gate-drain charge 3 nC |
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