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K4M51323PC-SE1L Datasheet(PDF) 1 Page - Samsung semiconductor

Part # K4M51323PC-SE1L
Description  Mobile-SDRAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4M51323PC-SE1L Datasheet(HTML) 1 Page - Samsung semiconductor

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K4M51323PC-S(D)E/G/C/F
February 2006
Mobile-SDRAM
FEATURES
GENERAL DESCRIPTION
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Address configuration
Organization
Bank
Row
Column Address
16Mx32
BA0,BA1
A0 - A12
A0 - A8
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-
VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could
result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-
visions may apply.
• 1.8V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system
clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
-. DPD (Deep Power Down)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Extended Temperature Operation (-25
°C ~ 85°C).
• Commercial Temperature Operation (-25
°C ~ 70°C).
• 90Balls FBGA( -SXXX -Pb, -DXXX -Pb Free).
The K4M51323PC is 536,870,912 bits synchronous high data
rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,
fabricated with SAMSUNG’s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications.
ORDERING INFORMATION
- S(D)E/G : Normal / Low Power, Extended Temperature(-25
°C ~ 85°C)
- S(D)C/F : Normal / Low Power, Commercial Temperature(-25
°C ~ 70°C)
Notes :
1. In case of 40MHz Frequency, CL1 can be supported.
Part No.
Max Freq.
Interface
Package
K4M51323PC-S(D)E/G/C/F75
133MHz(CL=3),83MHz(CL=2)
LVCMOS
90 FBGA Pb
(Pb Free)
K4M51323PC-S(D)E/G/C/F90
111MHz(CL=3),83MHz(CL=2)
K4M51323PC-S(D)E/G/C/F1L
111MHz(CL=3)*1,66MHz(CL2)


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