K4M51323PC-S(D)E/G/C/F

February 2006

Mobile-SDRAM

Register Programmed with Extended MRS

Address

BA1

BA0

A12 ~ A10/AP

A9

A8

A7

A6

A5

A4

A3

A2

A1

A0

Function

Mode Select

DS

PASR

Normal MRS Mode

Test Mode

CAS Latency

Burst Type

Burst Length

A8

A7

Type

A6

A5

A4

Latency

A3

Type

A2

A1

A0

BT=0

BT=1

0

0

Mode Register Set

0

0

0

Reserved

0

Sequential

0

0

0

1

1

0

1

Reserved

0

0

1

1

1

Interleave

0

0

1

2

2

1

0

Reserved

0

1

0

2

Mode Select

0

1

0

4

4

1

1

Reserved

0

1

1

3

BA1 BA0

Mode

0

1

1

8

8

Write Burst Length

1

0

0

Reserved

0

0

Setting

for Nor-

mal MRS

1

0

0

Reserved

Reserved

A9

Length

1

0

1

Reserved

1

0

1

Reserved

Reserved

0

Burst

1

1

0

Reserved

1

1

0

Reserved

Reserved

1

Single Bit

1

1

1

Reserved

1

1

1

Register Programmed with Normal MRS

Address

BA0 ~ BA1

A12 ~ A10/AP

A8

A7

A6

A5

A4

A3

A2

A1

A0

Function

"0" Setting for

Normal MRS

W.B.L

Test Mode

CAS Latency

BT

Burst Length

NOTES:

1. RFU(Reserved for future use) should stay "0" during MRS cycle.

2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.

3. Full Page Length : x32 : 64Mb(256) , 128Mb (256), 256Mb (512), 512Mb (512)

4. Mobile SDRAM supports PASR of full array, 1/2 of full array and 1/4 of full array.

Mode Select

Driver Strength

BA1

BA0

Mode

A6

A5

Driver Strength

A2

A1

A0

# of Banks

0

0

Normal MRS

0

0

Full

0

0

0

Full Array

0

1

Reserved

0

1

1/2

0

0

1

1/2 of Full Array

1

0

EMRS for Mobile SDRAM

1

0

1/4

0

1

0

1/4 of Full Array

1

1

Reserved

1

1

1/8

0

1

1

Reserved

Reserved Address

1

0

0

Reserved

A12~A10/AP

A9

A8

A7

A4

A3

1

0

1

Reserved

0

0

0

0

0

0

1

1

0

Reserved

1

1

1

Reserved

A. MODE REGISTER FIELD TABLE TO PROGRAM MODES

EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)