Philips Semiconductors

Product Specification

PowerMOS transistor

BUK482-60A

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

SYMBOL

PARAMETER

MAX.

UNIT

field-effect power transistor in a

plastic envelope suitable for surface

V

DS

Drain-source voltage

60

V

mount applications.

I

D

Drain current (DC)

2.7

A

The device is intended for use in

P

tot

Total power dissipation

1.7

W

automotive and general purpose

T

j

Junction temperature

150

˚C

switching applications.

R

DS(ON)

Drain-source on-state

0.13

Ω

resistance;

V

PINNING - SOT223

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

gate

2

drain

3

source

4

drain (tab)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DS

Drain-source voltage

-

-

60

V

V

DGR

Drain-gate voltage

R

-60

V

±V

GS

Gate-source voltage

-

-

30

V

I

D

Drain current (DC)

T

-

2.7

A

I

D

Drain current (DC)

T

-

1.7

A

I

DM

Drain current (pulse peak value)

T

-

11

A

P

tot

Total power dissipation

T

-

1.7

W

T

stg

Storage temperature

-

- 55

150

˚C

T

j

Junction Temperature

-

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-b

From junction to board

1

Mounted on any PCB e.g. Fig.18

-

40

-

K/W

R

th j-amb

From junction to ambient

Mounted on PCB of Fig.18

-

-

75

K/W

4

1

23

d

g

s

1 Temperature measured 1-3 mm from tab.

April 1993

1

Rev 1.000