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GD6NC60HD Datasheet(PDF) 4 Page - STMicroelectronics |
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GD6NC60HD Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STGD6NC60HD 4/15 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Static Symbol Parameter Test conditions Min. Typ. Max. Unit VBR(CES) Collector-emitter breakdown voltage IC= 1mA, VGE= 0 600 V VCE(sat) Collector-emitter saturation voltage VGE= 15V, IC= 3A VGE= 15V, IC= 3A, Tc= 125°C 1.9 1.7 2.5 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 3.75 5.75 V ICES Collector cut-off current (VGE = 0) VCE= Max rating,TC= 25°C VCE=Max rating,TC= 125°C 10 1 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE= ±20V, VCE= 0 ±100 nA gfs Forward transconductance VCE = 15V, IC= 3A 3S Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25V, f = 1MHz, VGE = 0 205 32 5.5 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390V, IC = 3A, VGE = 15V, (see Figure 17) 13.6 3.4 5.1 nC nC nC ICL Turn-off SOA minimum current Vclamp=390V, Tj=150°C, RG=10Ω, VGE=15V 19 A |
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