Philips Semiconductors

Product specification

PowerMOS transistor

BUK473-100A/B

Isolated version of BUK453-100A/B

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel

enhancement

mode

SYMBOL

PARAMETER

MAX.

MAX.

UNIT

field-effect power transistor in a

plastic

full-pack

envelope.

The

BUK473

-100A

-100B

device is intended for use in Switched

V

DS

Drain-source voltage

100

100

V

Mode

Power

Supplies

(SMPS),

I

D

Drain current (DC)

9

8

A

motor control, welding, DC/DC and

P

tot

Total power dissipation

25

25

W

AC/DC converters, and in general

R

DS(ON)

Drain-source on-state

0.16

0.2

Ω

purpose switching applications.

resistance

PINNING - SOT186A

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

gate

2

drain

3

source

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DS

Drain-source voltage

-

-

100

V

V

DGR

Drain-gate voltage

R

-

100

V

±V

GS

Gate-source voltage

-

-

30

V

-100A

-100B

I

D

Drain current (DC)

T

25 ˚C

-

9

8

A

I

D

Drain current (DC)

T

-

5.7

5

A

I

DM

Drain current (pulse peak value)

T

25 ˚C

-

36

32

A

P

tot

Total power dissipation

T

25 ˚C

-

25

W

T

stg

Storage temperature

-

- 55

150

˚C

T

j

Junction temperature

-

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-hs

Thermal resistance junction to

with heatsink compound

-

-

5

K/W

heatsink

R

th j-a

Thermal resistance junction to

-

55

-

K/W

ambient

12 3

case

d

g

s

November 1996

1

Rev 1.200