STB200NF03T4 datasheet(3/18 Pages) STMICROELECTRONICS

Part #	STB200NF03T4

Description	N-channel 30V - 0.0032ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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3 / 18 page

STP200NF03 - STB200NF03 - STB200NF03-1

Electrical ratings

3/18

1

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

30

V

VDGR

Drain-gate voltage (RGS = 20 kΩ)30

V

VGS

Gate- source voltage

± 20

V

ID

(1)

1.

Value limited by package

Drain current (continuous) at

TC = 25°C

120

A

ID

(1)

Drain current (continuous) at

TC = 100°C

120

A

IDM

(2)

2.

Pulse width limited by safe operating area.

Drain current (pulsed)

480

A

Ptot

Total dissipation at TC = 25°C

300

W

Derating factor

2.0

W/°C

dv/dt(3)

3.

ISD ≤120A, di/dt ≤400A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX

Peak diode recovery voltage slope

1.5

V/ns

EAS

(4)

4.

Starting Tj = 25 °C, ID = 60A, VDD = 25V

Single pulse avalanche energy

1.45

J

Tstg

Storage temperature

-55 to 175

°C

Tj

Max. operating junction

temperature

Table 2.

Thermal data

Rthj-case

Thermal resistance junction-case max

0.5

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Rthj-pcb

Thermal resistance junction-pcb

see curve 13 and 14

TJ

Maximum lead temperature for soldering purpose(1)

1.

for 10 sec. 1.6mm from case

300

°C

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