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B190NF04 Datasheet(PDF) 3 Page - STMicroelectronics |
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B190NF04 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 16 page STP190NF04 - STB190NF04 - STB190NF04-1 Electrical ratings 3/16 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 40 V VDGR Drain-gate voltage (RGS = 20 kΩ)40 V VGS Gate- source voltage ± 20 V ID (1) 1. Value limited by package Drain current (continuous) at TC = 25°C 120 A ID (1) Drain current (continuous) at TC = 100°C 120 A IDM (2) 2. Pulse width limited by safe operating area. Drain current (pulsed) 480 A Ptot Total dissipation at TC = 25°C 310 W Derating factor 2.07 W/°C dv/dt(3) 3. ISD ≤190A, di/dt ≤600A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Peak diode recovery voltage slope 7 V/ns EAS (4) 4. Starting Tj = 25 °C, ID = 95A, VDD = 35V Single pulse avalanche energy 860 mJ Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 2. Thermal data Rthj-case Thermal resistance junction-case max 0.48 °C/W Rthj-amb Thermal resistance junction-ambient max 50 °C/W TJ Maximum lead temperature for soldering purpose(1) 1. for 10 sec. 1.6mm from case 300 °C |
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