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BUK463-100A Datasheet(PDF) 1 Page - NXP Semiconductors |
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BUK463-100A Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification PowerMOS transistor BUK463-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount Drain-source voltage 100 V applications. V DS Drain current (DC) 14 A The device is intended for use in I D Total power dissipation 75 W Switched Mode Power Supplies P tot Junction temperature 175 ˚C (SMPS), motor control, welding, T j Drain-source on-state 0.16 Ω DC/DC and AC/DC converters, and in R DS(ON) resistance general purpose switching applications. PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 gate 2 drain 3 source mb drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Drain-source voltage - - 100 V V DGR Drain-gate voltage R GS = 20 kΩ - 100 V ±V GS Gate-source voltage - - 30 V I D Drain current (DC) T mb = 25 ˚C - 14 A I D Drain current (DC) T mb = 100 ˚C - 10 A I DM Drain current (pulse peak value) T mb = 25 ˚C - 56 A P tot Total power dissipation T mb = 25 ˚C - 75 W T stg Storage temperature - - 55 175 ˚C T j Junction temperature - - 175 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to - - 2 K/W mounting base R th j-a Thermal resistance junction to minimum footprint - 50 - K/W ambient FR4 board (see fig. 18) 13 mb 2 d g s February 1996 1 Rev 1.000 |
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Similar Description - BUK463-100A |
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