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BUK463-100A Datasheet(PDF) 1 Page - NXP Semiconductors

Part # BUK463-100A
Description  PowerMOS transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK463-100A Datasheet(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
PowerMOS transistor
BUK463-100A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
SYMBOL
PARAMETER
MAX.
UNIT
field-effect power transistor in a plastic
envelope suitable for surface mount
Drain-source voltage
100
V
applications.
V
DS
Drain current (DC)
14
A
The device is intended for use in
I
D
Total power dissipation
75
W
Switched Mode Power Supplies
P
tot
Junction temperature
175
˚C
(SMPS), motor control, welding,
T
j
Drain-source on-state
0.16
DC/DC and AC/DC converters, and in
R
DS(ON)
resistance
general purpose switching
applications.
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
-
100
V
V
DGR
Drain-gate voltage
R
GS = 20 kΩ
-
100
V
±V
GS
Gate-source voltage
-
-
30
V
I
D
Drain current (DC)
T
mb =
25 ˚C
-
14
A
I
D
Drain current (DC)
T
mb = 100 ˚C
-
10
A
I
DM
Drain current (pulse peak value)
T
mb =
25 ˚C
-
56
A
P
tot
Total power dissipation
T
mb =
25 ˚C
-
75
W
T
stg
Storage temperature
-
- 55
175
˚C
T
j
Junction temperature
-
-
175
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
-
2
K/W
mounting base
R
th j-a
Thermal resistance junction to minimum footprint
-
50
-
K/W
ambient
FR4 board (see fig. 18)
13
mb
2
d
g
s
February 1996
1
Rev 1.000


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