MOSFET ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Conditions

Min

Typ

Max

Units

BV

DSS

Drain-Source Breakdown Voltage

V

30

V

I

DSS

Zero Gate Voltage Drain Current

V

1

µA

T

20

µA

I

GSSF

Gate - Body Leakage, Forward

V

100

nA

I

GSSR

Gate - Body Leakage, Reverse

V

-100

nA

V

GS(th)

Gate Threshold Voltage

V

1

1.7

3

V

R

DS(ON)

Static Drain-Source On-Resistance

V

0.025

0.035

Ω

V

0.043

0.055

g

FS

Forward Transconductance

V

12

S

I

D(ON)

On-State Drain Current

V

15

A

C

iss

Input Capacitance

V

350

pF

C

oss

Output Capacitance

f = 1.0 MHz

220

pF

C

rss

Reverse Transfer Capacitance

80

pF

Q

g

Total Gate Charge

V

12

17

nC

t

D(on)

Turn - On Delay Time

V

V

7.5

15

ns

t

r

Turn - On Rise Time

12

25

ns

t

D(off)

Turn - Off Delay Time

13

25

ns

t

f

Turn - Off Fall Time

6

15

ns

MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current

1.3

A

V

SD

Drain-Source Diode Forward Voltage

V

(Note 2)

0.8

1.2

V

SCHOTTKY DIODE CHARACTERISTICS

B

V

Reverse Breakdown Voltage

I

30

V

I

R

Reverse Leakage

V

0.5

mA

V

F

Forward Voltage

I

280

mV

I

420

I

500

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

(Note 1a)

78

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

40

°C/W

Notes:

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDFS6N303 Rev. D3

c. 135

pad of 2oz copper.

b. 125

pad of 2oz copper.

a. 78

pad of 2oz copper.