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FDFS6N303 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDFS6N303 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page Electrical Characteristics (T A = 25 oC unless otherwise noted ) MOSFET ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions Min Typ Max Units BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µA 30 V I DSS Zero Gate Voltage Drain Current V DS = 24 V, VGS = 0 V 1 µA T J =125°C 20 µA I GSSF Gate - Body Leakage, Forward V GS = 20 V, VDS = 0 V 100 nA I GSSR Gate - Body Leakage, Reverse V GS = -20 V, VDS= 0 V -100 nA V GS(th) Gate Threshold Voltage V DS = VGS, ID = 250 µA 1 1.7 3 V R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, I D = 6 A 0.025 0.035 Ω V GS = 4.5 V, I D = 4.8 A 0.043 0.055 g FS Forward Transconductance V DS = 10 V, ID = 6 A 12 S I D(ON) On-State Drain Current V GS = 10 V, VDS = 5 V 15 A C iss Input Capacitance V DS = 15 V, VGS = 0 V, 350 pF C oss Output Capacitance f = 1.0 MHz 220 pF C rss Reverse Transfer Capacitance 80 pF Q g Total Gate Charge V DS = 15 V, ID = 6 A, VGS = 10 V 12 17 nC t D(on) Turn - On Delay Time V DD = 10 V, ID = 1 A, V GS = 4.5 V, RGEN = 6 Ω 7.5 15 ns t r Turn - On Rise Time 12 25 ns t D(off) Turn - Off Delay Time 13 25 ns t f Turn - Off Fall Time 6 15 ns MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I S Maximum Continuous Drain-Source Diode Forward Current 1.3 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 1.3 A (Note 2) 0.8 1.2 V SCHOTTKY DIODE CHARACTERISTICS B V Reverse Breakdown Voltage I R = 1 mA 30 V I R Reverse Leakage V R = 30 V 0.5 mA V F Forward Voltage I F = 0.1 A 280 mV I F = 3 A 420 I F = 6 A 500 THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDFS6N303 Rev. D3 c. 135 OC/W on a 0.003 in2 pad of 2oz copper. b. 125 OC/W on a 0.02 in2 pad of 2oz copper. a. 78 OC/W on a 0.5 in2 pad of 2oz copper. |
Similar Part No. - FDFS6N303_03 |
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Similar Description - FDFS6N303_03 |
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