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30N06L-TF3-R Datasheet(PDF) 6 Page - Unisonic Technologies |
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30N06L-TF3-R Datasheet(HTML) 6 Page - Unisonic Technologies |
6 / 8 page 30N06 MOSFET UNISONICTECHNOLOGIESCO.,LTD 6 of 8 www.unisonic.com.tw QW-R502-087,A TYPICAL CHARACTERISTICS 10 2 10 1 10 0 10 1 10 -1 10 0 Drain-Source Voltage, VDS (V) On-State Characteristics 10 2 10 1 10 0 2 Gate-Source Voltage, VGS (V) Transfer Characteristics 468 10 35 7 9 V GS Top: 15V 10 V 8 V 7 V 6 V 5 .5V 5V Bottorm : 4.5V 4.5V Note: 1. VDS=25V 2. 20µs Pulse Test 0.0 0 Drain Current, ID (A) 40 80 100 20 40 60 80 100 On-Resistance Variation vs. Drain Current and Gate Voltage 10 2 10 1 100 0.2 Source-Drain Voltage, VSD (V) Reverse Drain Current vs. Allowable Case Temperature 1.6 0.4 0.6 0.8 1.0 1.2 1.4 20 60 120 *Note: 1. VGS=0V 2. 250µs Test 25℃ 150℃ VGS=10V VGS=20V 1500 0 0.1 Drain-Source Voltage, VDC (V) Capacitance Characteristics (Non-Repetitive) 500 1000 1 0 Total Gate Charge, QG (nC) 5 15 20 25 8 10 12 Gate Charge Characteristics 10 6 4 2 0 10 2000 Ciss *Note: ID=30A VDS=30V VDS=48V Coss Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd Crss *Note: 1. VGS=0V 2. f = 1MHz |
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