2N6075BG datasheet(2/8 Pages) ONSEMI

Part #	2N6075BG

Description	Sensitive Gate Triacs Silicon Bidirectional Thyristors

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2N6071A/B Series

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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

*Peak Repetitive Off-State Voltage (Note 1)

(TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)

2N6071A,B

2N6073A,B

2N6075A,B

VDRM,

VRRM

200

400

600

V

*On-State RMS Current (TC = 85°C) Full Cycle Sine Wave 50 to 60 Hz

IT(RMS)

4.0

A

*Peak Non−repetitive Surge Current (One Full cycle, 60 Hz, TJ = +110°C)

ITSM

30

A

Circuit Fusing Considerations (t = 8.3 ms)

I2t

3.7

A2s

*Peak Gate Power (Pulse Width

≤ 1.0 ms, TC = 85°C)

PGM

10

W

*Average Gate Power (t = 8.3 ms, TC = 85°C)

PG(AV)

0.5

W

*Peak Gate Voltage (Pulse Width

≤ 1.0 ms, TC = 85°C)

VGM

5.0

V

*Operating Junction Temperature Range

TJ

−40 to +110

°C

*Storage Temperature Range

Tstg

−40 to +150

°C

Mounting Torque (6-32 Screw) (Note 2)

−

8.0

in. lb.

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such

that the voltage ratings of the devices are exceeded.

2. Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal

resistance. Main terminal 2 and heatsink contact pad are common.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

*Thermal Resistance, Junction−to−Case

RqJC

3.5

°C/W

Thermal Resistance, Junction−to−Ambient

RqJA

75

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8

″ from Case for 10 Seconds

TL

260

°C

*Indicates JEDEC Registered Data.

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