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2N6075BG Datasheet(PDF) 1 Page - ON Semiconductor |
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2N6075BG Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 8 page © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 7 1 Publication Order Number: 2N6071/D 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features • Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions • Gate Triggering: 4 Mode − 2N6071A, B; 2N6073A, B; 2N6075A, B • Blocking Voltages to 600 V • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Device Marking: Device Type, e.g., 2N6071A, Date Code *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MT1 G MT2 http://onsemi.com TRIACS 4.0 A RMS, 200 − 600 V TO−225 CASE 077 STYLE 5 1 2 3 REAR VIEW SHOW TAB x = 1, 3, 5 y = A, B Y = Year WW = Work Week G = Pb−Free Package MARKING DIAGRAM YWW 2N 607xyG 1. Cathode 2. Anode 3. Gate Preferred devices are recommended choices for future use and best overall value. See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. ORDERING INFORMATION |
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