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2N6073BG Datasheet(PDF) 1 Page - ON Semiconductor

Part # 2N6073BG
Description  Sensitive Gate Triacs Silicon Bidirectional Thyristors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N6073BG Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 7
1
Publication Order Number:
2N6071/D
2N6071A/B Series
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Features
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
Gate Triggering: 4 Mode − 2N6071A, B; 2N6073A, B; 2N6075A, B
Blocking Voltages to 600 V
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Device Marking: Device Type, e.g., 2N6071A, Date Code
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MT1
G
MT2
http://onsemi.com
TRIACS
4.0 A RMS, 200 − 600 V
TO−225
CASE 077
STYLE 5
1
2
3
REAR VIEW
SHOW TAB
x
= 1, 3, 5
y
= A, B
Y
= Year
WW
= Work Week
G
= Pb−Free Package
MARKING DIAGRAM
YWW
2N
607xyG
1. Cathode
2. Anode
3. Gate
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION


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