2N6287 datasheet(4/7 Pages) ONSEMI

Part #	2N6287

Description	Darlington Complementary Silicon Power Transistors

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2N6283 2N6284 2N6286 2N6287

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4

ACTIVE−REGION SAFE OPERATING AREA

50

Figure 5. 2N6284, 2N6287

20

2.0

0.05

50

100

0.2

5.0

0.5

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

10

1.0

0.1

2.0

5.0

20

10

0.1 ms

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION @ TC = 25°C

SINGLE PULSE

TJ = 200°C

dc

5.0 ms

1.0 ms

0.5 ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e. the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) <

200

_C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

10,000

1.0

Figure 6. Small−Signal Current Gain

f, FREQUENCY (kHz)

10

2.0

5.0 10

20

50 100

200

1000

500

100

5000

20

200

500

2000

1000

50

TJ = 25°C

VCE = 3.0 Vdc

IC = 10 A

1000

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

100

1.0

2.0

5.0

20

100

10

500

300

200

Cib

Cob

50

0.2

0.5

2N6284 (NPN)

2N6287 (PNP)

TJ = 25°C

700

2N6284 (NPN)

2N6287 (PNP)

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