2N6058 datasheet(2/7 Pages) ONSEMI

Part #	2N6058

Description	Darlington Complementary Silicon Power Transistors

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2N6052

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*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (2)

(IC = 100 mAdc, IB = 0)

2N6058

2N6052, 2N6059

VCEO(sus)

80

100

—

Vdc

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

2N6058

(VCE = 50 Vdc, IB = 0)

2N6052, 2N6059

ICEO

—

1.0

mAdc

Collector Cutoff Current

(VCE = Rated VCEO, VBE(off) = 1.5 Vdc)

(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150_C)

ICEX

—

0.5

5.0

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

—

2.0

mAdc

ON CHARACTERISTICS (2)

DC Current Gain

(IC = 6.0 Adc, VCE = 3.0 Vdc)

(IC = 12 Adc, VCE = 3.0 Vdc)

hFE

750

100

18,000

—

Collector−Emitter Saturation Voltage

(IC = 6.0 Adc, IB = 24 mAdc)

(IC = 12 Adc, IB = 120 mAdc)

VCE(sat)

—

2.0

3.0

Vdc

Base−Emitter Saturation Voltage

(IC = 12 Adc, IB = 120 mAdc)

VBE(sat)

—

4.0

Vdc

Base−Emitter On Voltage

(IC = 6.0 Adc, VCE = 3.0 Vdc)

VBE(on)

—

2.8

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small−Signal Short Circuit Forward

Current Transfer Ratio

(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

|hfe|

4.0

—

MHz

Output Capacitance

2N6052

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

2N6058/2N6059

Cob

—

500

300

pF

Small−Signal Current Gain

(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

hfe

300

—

*Indicates JEDEC Registered Data.

(2) Pulse test: Pulse Width = 300 μs, Duty Cycle = 2.0%.

Figure 2. Switching Times Test Circuit

10

0.2

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

5.0

0.1

0.5

1.0

3.0

20

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

1.0

2.0

2N6052

2N6059

tf

tr

ts

td @ VBE(off) = 0

V2

approx

+8.0 V

V1

approx

−8.0 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25

μs

0

RB

51

D1

+4.0 V

VCC

−30 V

RC

TUT

≈ 5.0 k

≈ 50

SCOPE

for td and tr, D1 is disconnected

and V2 = 0

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

0.5

0.2

5.0

10

For NPN test circuit reverse diode and voltage polarities.

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