2N6052_06 datasheet(5/7 Pages) ONSEMI

Part #	2N6052

Description	Darlington Complementary Silicon Power Transistors

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2N6052

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5

20,000

0.2

Figure 9. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

200

0.3

0.5

1.0

2.0

20

10

PNP

2N6052

NPN

2N6058, 2N6059

Figure 10. Collector Saturation Region

3.0

0.5

IB, BASE CURRENT (mA)

1.0

2.0

10

50

1.8

IC = 3.0 A

TJ = 25°C

6.0 A

2.2

2.6

5.0

3.0

0.2

IC, COLLECTOR CURRENT (AMP)

0.3

0.5

1.0

3.0

20

2.5

2.0

1.5

1.0

0.5

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

Figure 11. “On” Voltages

VBE @ VCE = 3.0 V

2.0

10,000

TJ = 150°C

25

°C

−55

°C

20

IC, COLLECTOR CURRENT (AMP)

VCE = 3.0 V

TJ = 150°C

25

°C

−55

°C

1.4

9.0 A

IB, BASE CURRENT (mA)

TJ = 25°C

IC, COLLECTOR CURRENT (AMP)

TJ = 25°C

VBE @ VCE = 3.0 V

5000

3000

2000

1000

500

300

3.0

5.0

VCE = 3.0 V

40,000

0.2

400

0.3

0.5

1.0

2.0

20

10

20,000

10,000

6,000

4,000

2,000

1,000

600

3.0

5.0

3.0

1.0

1.8

2.2

2.6

1.4

10

5.0

3.0

0.2 0.3

0.5

1.0

3.0

20

2.5

2.0

1.5

1.0

0.5

2.0

10

5.0

30

12 A

IC = 3.0 A

6.0 A

9.0 A

12 A

0.5

1.0

2.0

10

50

5.0

20

3.0

30

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

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