2N5885G datasheet(1/6 Pages) ONSEMI

Part #	2N5885G

Description	Complementary Silicon High?뭁ower Transistors

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March, 2006 − Rev. 11

1

Publication Order Number:

2N5883/D

2N5883, 2N5884 (PNP)

2N5885, 2N5886 (NPN)

2N5884 and 2N5886 are Preferred Devices

Complementary Silicon

High−Power Transistors

Complementary silicon high−power transistors are designed for

general−purpose power amplifier and switching applications.

Features

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc

• Low Leakage Current

ICEX = 1.0 mAdc (max) at Rated Voltage

• Excellent DC Current Gain −

hFE = 20 (min) at IC = 10 Adc

• High Current Gain Bandwidth Product −

ft = 4.0 MHz (min) at IC = 1.0 Adc

• Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

2N5883, 2N5885

2N5884, 2N5886

VCEO

60

80

Vdc

Collector−Base Voltage

2N5883, 2N5885

2N5884, 2N5886

VCB

60

80

Vdc

Emitter−Base Voltage

VEB

5.0

Vdc

Collector Current −

Continuous

Peak

IC

25

50

Adc

Base Current

IB

7.5

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

200

1.15

W

W/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

qJC

0.875

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC registered data. Units and conditions differ on some

parameters and re−registration reflecting these changes has been requested.

All above values most or exceed present JEDEC registered data.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

25 AMPERE COMPLEMENTARY

SILICON POWER TRANSISTORS

60 − 80 VOLTS, 200 WATTS

MARKING DIAGRAM

TO−204AA (TO−3)

CASE 1−07

STYLE 1

2N588x

= Device Code

x = 3, 4, 5, or 6

G

= Pb−Free Package

A

= Assembly Location

YY

= Year

WW

= Work Week

MEX

= Country of Origin

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

2N588xG

AYYWW

MEX

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