2N5886 datasheet(2/6 Pages) ONSEMI

Part #	2N5886

Description	Complementary Silicon High?뭁ower Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)

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2

ELECTRICAL CHARACTERISTICS (Note 2) (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector−Emitter Sustaining Voltage (Note 3)

2N5883, 2N5885

(IC = 200 mAdc, IB = 0)

2N5884, 2N5886

VCEO(sus)

60

80

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

2N5883, 2N5885

(VCE = 40 Vdc, IB = 0)

2N5984, 2N5886

ICEO

−

2.0

mAdc

Collector Cutoff Current

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)

2N5883, 2N5885

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)

2N5884, 2N5886

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)

2N5883, 2N5885

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)

2N5884, 2N5886

ICEX

−

1.0

10

mAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

2N5883, 2N5885

(VCB = 80 Vdc, IE = 0)

2N5884, 2N5886

ICBO

−

1.0

mAdc

Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)

IEBO

−

1.0

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

(IC = 10 Adc, VCE = 4.0 Vdc)

(IC = 25 Adc, VCE = 4.0 Vdc)

hFE

35

20

4.0

−

100

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 15 Adc, IB = 1.5 Adc)

(IC = 25 Adc, IB = 6.25 Adc)

VCE(sat)

−

1.0

4.0

Vdc

Base−Emitter Saturation Voltage (Note 3)

(IC = 25 Adc, IB = 6.25 Adc)

VBE(sat)

−

2.5

Vdc

Base−Emitter On Voltage (Note 3)

(IC = 10 Adc, VCE = 4.0 Vdc)

VBE(on)

−

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 4)

(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)

fT

4.0

−

MHz

Output Capacitance

2N5883, 2N5884

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

2N5885, 2N5886

Cob

−

1000

500

pF

Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 kHz)

hfe

20

−

SWITCHING CHARACTERISTICS

Rise Time

(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)

tr

−

0.7

ms

Storage Time

ts

−

1.0

ms

Fall Time

tf

−

0.8

ms

2. Indicates JEDEC Registered Data.

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

4. fT = |hfe| • ftest.

200

0

25

50

75

100

125

150

200

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

175

100

75

50

125

150

25

175

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