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2N6027 Datasheet(PDF) 2 Page - ON Semiconductor

Part # 2N6027
Description  Programmable Unijunction Transistor
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N6027 Datasheet(HTML) 2 Page - ON Semiconductor

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2N6027, 2N6028
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Power Dissipation*
Derate Above 25
°C
PF
1/
qJA
300
4.0
mW
mW/
°C
DC Forward Anode Current*
Derate Above 25
°C
IT
150
2.67
mA
mA/
°C
DC Gate Current*
IG
"50
mA
Repetitive Peak Forward Current
100
ms Pulse Width, 1% Duty Cycle
20
ms Pulse Width, 1% Duty Cycle*
ITRM
1.0
2.0
A
Non−Repetitive Peak Forward Current
10
ms Pulse Width
ITSM
5.0
A
Gate to Cathode Forward Voltage*
VGKF
40
V
Gate to Cathode Reverse Voltage*
VGKR
*5.0
V
Gate to Anode Reverse Voltage*
VGAR
40
V
Anode to Cathode Voltage* (Note 1)
VAK
±40
V
Capacitive Discharge Energy (Note 2)
E
250
mJ
Power Dissipation (Note 3)
PD
300
mW
Operating Temperature
TOPR
−50 to +100
°C
Junction Temperature
TJ
−50 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*Indicates JEDEC Registered Data
1. Anode positive, RGA = 1000 W
Anode negative, RGA = open
2. E = 0.5
 CV2 capacitor discharge energy limiting resistor and repetition.
3. Derate current and power above 25
°C.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
75
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Maximum Lead Temperature for Soldering Purposes
(
t1/16″ from case, 10 seconds maximum)
TL
260
°C


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