2N5655G datasheet(2/5 Pages) ONSEMI

Part #	2N5655G

Description	Plastic NPN Silicon High?뭋oltage Power Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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2N5655, 2N5657

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

2N5655

(IC = 100 mAdc (inductive), L = 50 mH)

2N5657

VCEO(sus)

250

350

−

Vdc

Collector−Emitter Breakdown Voltage

2N5655

(IC = 1.0 mAdc, IB = 0)

2N5657

V(BR)CEO

250

350

−

Vdc

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)

2N5655

(VCE = 250 Vdc, IB = 0)

2N5657

ICEO

−

0.1

mAdc

Collector Cutoff Current

(VCE = 250 Vdc, VEB(off) = 1.5 Vdc)

2N5655

(VCE = 350 Vdc, VEB(off) = 1.5 Vdc)

2N5657

(VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)

2N5655

(VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)

2N5657

ICEX

−

0.1

1.0

mAdc

Collector Cutoff Current

(VCB = 275 Vdc, IE = 0)

2N5655

(VCB = 375 Vdc, IE = 0)

2N5657

ICBO

−

10

mAdc

Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)

IEBO

−

10

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 50 mAdc, VCE = 10 Vdc)

(IC = 100 mAdc, VCE = 10 Vdc)

(IC = 250 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

hFE

25

30

15

5.0

−

250

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 100 mAdc, IB = 10 mAdc)

(IC = 250 mAdc, IB = 25 mAdc)

(IC = 500 mAdc, IB = 100 mAdc)

VCE(sat)

−

1.0

2.5

10

Vdc

Base−Emitter Voltage (IC = 100 mAdc, VCE = 10 Vdc) (Note 3)

VBE

−

1.0

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) (Note 4)

fT

10

−

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)

Cob

−

25

pF

Small−Signal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

20

−

2. Indicates JEDEC registered data for 2N5655 Series.

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

4. fT is defined as the frequency at which |hfe| extrapolates to unity.

40

0

25

50

75

100

150

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

30

20

10

125

Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.

Figure 2. Sustaining Voltage Test Circuit

50 mH

200

50 V

+

−

+

X

Y

TO SCOPE

Hg RELAY

300

1.0

6.0 V

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