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2N5655 Datasheet(PDF) 3 Page - ON Semiconductor

Part # 2N5655
Description  Plastic NPN Silicon High?뭋oltage Power Transistor
Download  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N5655 Datasheet(HTML) 3 Page - ON Semiconductor

  2N5655_06 Datasheet HTML 1Page - ON Semiconductor 2N5655_06 Datasheet HTML 2Page - ON Semiconductor 2N5655_06 Datasheet HTML 3Page - ON Semiconductor 2N5655_06 Datasheet HTML 4Page - ON Semiconductor 2N5655_06 Datasheet HTML 5Page - ON Semiconductor  
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2N5655, 2N5657
http://onsemi.com
3
1.0
20
Figure 3. Active−Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.5
0.2
0.1
0.01
30
40
60
100
200
300 400
600
Second Breakdown Limit
Thermal Limit @ TC = 25°C
Bonding Wire Limit
Curves apply below rated VCEO
TJ = 150°C
d-
c
1.0 ms
0.05
0.02
10
ms
2N5655
2N5657
500
ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
Figure 4. Current Gain
IC, COLLECTOR CURRENT (mA)
300
10
1.0
200
100
70
50
30
2.0
3.0
5.0
7.0
30
50
70
100
200
300
500
10
20
20
TJ = +150°C
+25
°C
−55
°C
VCE = 10 V
VCE = 2.0 V
+100
°C
1.0
10
IC, COLLECTOR CURRENT (mA)
0.8
0.6
0.4
0
20
50
100
200 300
500
VBE(sat) @ IC/IB = 10
0.2
30
VBE @ VCE = 10 V
VCE(sat) @ IC/IB = 10
IC/IB = 5.0
TJ = + 25°C
Figure 5. “On” Voltages


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