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2N5655 Datasheet(PDF) 3 Page - ON Semiconductor |
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2N5655 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 5 page 2N5655, 2N5657 http://onsemi.com 3 1.0 20 Figure 3. Active−Region Safe Operating Area VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0.5 0.2 0.1 0.01 30 40 60 100 200 300 400 600 Second Breakdown Limit Thermal Limit @ TC = 25°C Bonding Wire Limit Curves apply below rated VCEO TJ = 150°C d- c 1.0 ms 0.05 0.02 10 ms 2N5655 2N5657 500 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 4. Current Gain IC, COLLECTOR CURRENT (mA) 300 10 1.0 200 100 70 50 30 2.0 3.0 5.0 7.0 30 50 70 100 200 300 500 10 20 20 TJ = +150°C +25 °C −55 °C VCE = 10 V VCE = 2.0 V +100 °C 1.0 10 IC, COLLECTOR CURRENT (mA) 0.8 0.6 0.4 0 20 50 100 200 300 500 VBE(sat) @ IC/IB = 10 0.2 30 VBE @ VCE = 10 V VCE(sat) @ IC/IB = 10 IC/IB = 5.0 TJ = + 25°C Figure 5. “On” Voltages |
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Similar Description - 2N5655_06 |
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