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2N5457 Datasheet(PDF) 1 Page - ON Semiconductor |
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2N5457 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 5 1 Publication Order Number: 2N5457/D 2N5457, 2N5458 Preferred Device JFETs − General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and switching applications. Features • N−Channel for Higher Gain • Drain and Source Interchangeable • High AC Input Impedance • High DC Input Resistance • Low Transfer and Input Capacitance • Low Cross−Modulation and Intermodulation Distortion • Unibloc Plastic Encapsulated Package • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Drain − Gate Voltage VDG 25 Vdc Reverse Gate − Source Voltage VGSR −25 Vdc Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 310 2.82 mW mW/ °C Operating Junction Temperature TJ 135 °C Storage Temperature Range Tstg − 65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping ORDERING INFORMATION 2N5457 TO−92 1000 Units/Box Preferred devices are recommended choices for future use and best overall value. 2N5458 TO−92 1000 Units/Box http://onsemi.com 1 DRAIN 2 SOURCE 3 GATE 2N5458G TO−92 (Pb−Free) 1000 Units/Box 2N5457G TO−92 (Pb−Free) 1000 Units/Box MARKING DIAGRAM TO−92 CASE 29 STYLE 5 1 2 3 2N 545x AYWW G G 2N545x = Device Code x = 7 or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) |
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Similar Description - 2N5457_06 |
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