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1SMB51AT3G Datasheet(PDF) 2 Page - ON Semiconductor |
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1SMB51AT3G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page Uni−Directional TVS IPP IF V I IR IT VRWM VC VBR VF 1SMB5.0AT3 Series http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms PPK 600 W DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2) Derate Above 75 °C Thermal Resistance from Junction−to−Lead PD RqJL 3.0 40 25 W mW/ °C °C/W DC Power Dissipation (Note 3) @ TA = 25°C Derate Above 25 °C Thermal Resistance from Junction−to−Ambient PD RqJA 0.55 4.4 226 W mW/ °C °C/W Forward Surge Current (Note 4) @ TA = 25°C IFSM 100 A Operating and Storage Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 10 X 1000 ms, non−repetitive. 2. 1 in square copper pad, FR−4 board. 3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF 5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, non−repetitive duty cycle. |
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