Electronic Components Datasheet Search |
|
BUK444-800A Datasheet(PDF) 2 Page - NXP Semiconductors |
|
BUK444-800A Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product Specification PowerMOS transistor BUK444-800A/B STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 800 - - V voltage V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 2.1 3.0 4.0 V I DSS Zero gate voltage drain current V DS = 800 V; VGS = 0 V; Tj = 25 ˚C - 2 20 µA I DSS Zero gate voltage drain current V DS = 800 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA I GSS Gate source leakage current V GS = ±30 V; VDS = 0 V - 10 100 nA R DS(ON) Drain-source on-state V GS = 10 V; BUK444-800A - 5.0 6.0 Ω resistance I D = 1.0 A BUK444-800B - 6.0 8.0 Ω DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 25 V; ID = 1.0 A 1.0 2.3 - S C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 450 750 pF C oss Output capacitance - 42 70 pF C rss Feedback capacitance - 15 30 pF t d on Turn-on delay time V DD = 30 V; ID = 1.9 A; - 15 20 ns t r Turn-on rise time V GS = 10 V; RGS = 50 Ω; - 25 40 ns t d off Turn-off delay time R gen = 50 Ω - 5065ns t f Turn-off fall time - 30 40 ns L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 12 - pF heatsink REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - - 1.4 A current I DRM Pulsed reverse drain current - - - 5.6 A V SD Diode forward voltage I F = 1.4 A ; VGS = 0 V - 1.0 1.3 V t rr Reverse recovery time I F = 1.4 A; -dIF/dt = 100 A/µs; - 230 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 100 V - 1.9 - µC April 1993 2 Rev 1.100 |
Similar Part No. - BUK444-800A |
|
Similar Description - BUK444-800A |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |