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2N5400RLRP Datasheet(PDF) 2 Page - ON Semiconductor |
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2N5400RLRP Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page 2N5400, 2N5401 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) 2N5400 2N5401 V(BR)CEO 120 150 − − Vdc Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0) 2N5400 2N5401 V(BR)CBO 130 160 − − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) 2N5400 (VCB = 120 Vdc, IE = 0) 2N5401 (VCB = 100 Vdc, IE = 0, TA = 100°C) 2N5400 (VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5401 ICBO − − − − 100 50 100 50 nAdc mAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO − 50 nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5400 2N5401 (IC = 10 mAdc, VCE = 5.0 Vdc) 2N5400 2N5401 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N5400 2N5401 hFE 30 50 40 60 40 50 − − 180 240 − − − Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) − − 0.2 0.5 Vdc Base−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) − − 1.0 1.0 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) 2N5400 2N5401 fT 100 100 400 300 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 6.0 pF Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N5400 2N5401 hfe 30 40 200 200 − Noise Figure (IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) NF − 8.0 dB 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. |
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