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2N5400RLRP Datasheet(PDF) 1 Page - ON Semiconductor |
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2N5400RLRP Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 1 1 Publication Order Number: 2N5400/D 2N5400, 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage VCBO 130 160 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.5 12 Watts mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not nor- mal operating conditions) and are not valid simultaneously. If these limits are ex- ceeded, device functional operation is not implied, damage may occur and reli- ability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W 2N 540x AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) MARKING DIAGRAM TO−92 CASE 29 STYLE 1 1 2 3 Preferred devices are recommended choices for future use and best overall value. See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION http://onsemi.com *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. COLLECTOR 3 2 BASE 1 EMITTER |
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