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2N5194G Datasheet(PDF) 4 Page - ON Semiconductor |
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2N5194G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page 2N5194, 2N5195 http://onsemi.com 4 Figure 7. Switching Time Equivalent Test Circuit APPROX −11 V TURN−ON PULSE Vin t1 VBE(off) TURN−OFF PULSE Vin t3 t2 APPROX −11 V VCC SCOPE RB Cjd <<Ceb +4.0 V t1 ≤ 7.0 ns 100 < t2 < 500 ms t3 < 15 ns DUTY CYCLE ≈ 2.0% Vin RC 0 RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 500 0.1 VR, REVERSE VOLTAGE (VOLTS) 0.2 0.3 0.5 1.0 3.0 5.0 20 40 300 200 100 70 50 TJ = 25°C Figure 8. Capacitance 2.0 10 30 Ceb Ccb APPROX +9.0 V 2.0 0.05 Figure 9. Turn−On Time IC, COLLECTOR CURRENT (AMP) 1.0 0.7 0.5 0.3 0.2 0.1 0.02 0.07 0.1 0.2 0.3 1.0 2.0 4.0 tr @ VCC = 30 V IC/IB = 10 TJ = 25°C 0.03 0.5 0.05 0.07 0.7 3.0 tr @ VCC = 10 V td @ VBE(off) = 2.0 V 2.0 0.05 Figure 10. Turn−Off Time IC, COLLECTOR CURRENT (AMP) 1.0 0.7 0.5 0.3 0.2 0.1 0.02 0.07 0.1 0.2 0.3 1.0 2.0 4.0 tf @ VCC = 30 V IB1 = IB2 IC/IB = 10 ts′ = ts − 1/8 tf TJ = 25°C 0.03 0.5 0.05 0.07 0.7 3.0 tf @ VCC = 10 V ts′ 10 1.0 Figure 11. Rating and Thermal Data Active−Region Safe Operating Area VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 5.0 2.0 1.0 0.5 0.1 2.0 5.0 10 20 50 100 SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT 0.2 CURVES APPLY BELOW RATED VCEO TJ = 150°C 2N5194 dc 5.0 ms 1.0 ms 100 ms 2N5195 Note 1: There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TJ(pk) = 150_C. TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. At high−case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. |
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