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2N2088RLRAG Datasheet(PDF) 2 Page - ON Semiconductor

Part No. 2N2088RLRAG
Description  Amplifier Transistors NPN Silicon
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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 2 page
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2N5088, 2N5089
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
2N5088
2N5089
V(BR)CEO
30
25
Vdc
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
2N5088
2N5089
V(BR)CBO
35
30
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
2N5088
(VCB = 15 Vdc, IE = 0)
2N5089
ICBO
50
50
nAdc
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
IEBO
50
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
2N5088
2N5089
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5088
2N5089
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)
2N5088
2N5089
hFE
300
400
350
450
300
400
900
1200
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
0.5
Vdc
Base −Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)
VBE(on)
0.8
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
fT
50
MHz
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
4.0
pF
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
10
pF
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
2N5088
2N5089
hfe
350
450
1400
1800
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
2N5088
2N5089
NF
3.0
2.0
dB
2. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model




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