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2N5195G Datasheet(PDF) 3 Page - ON Semiconductor |
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2N5195G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 6 page 2N5194, 2N5195 http://onsemi.com 3 Figure 2. Collector Saturation Region IB, BASE CURRENT (mA) 2.0 0 0.05 1.6 1.2 0.8 0.4 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10 500 IC = 10 mA 5.0 7.0 20 30 50 70 100 200 300 100 mA 1.0 A 3.0 A TJ = 25°C 2.0 0.005 IC, COLLECTOR CURRENT (AMP) 0.01 0.02 0.03 0.05 0.2 0.3 1.0 2.0 4.0 1.6 1.2 0.8 0.4 0 TJ = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 Figure 3. “On” Voltage 0.1 0.5 3.0 VBE @ VCE = 2.0 V +2.5 Figure 4. Temperature Coefficients IC, COLLECTOR CURRENT (AMP) *APPLIES FOR IC/IB ≤ hFE @ VCE TJ = −65°C to +150°C +2.0 +1.5 +0.5 0 −0.5 −1.0 −1.5 −2.0 −2.5 qVB for VBE *qVC for VCE(sat) +1.0 0.005 0.01 0.020.03 0.05 0.2 0.3 1.0 2.0 4.0 0.1 0.5 3.0 103 +0.4 Figure 5. Collector Cut−Off Region VBE, BASE−EMITTER VOLTAGE (VOLTS) 102 101 100 10−1 10− 2 10− 3 +0.3 +0.2 +0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 VCE = 30 Vdc TJ = 150°C 100°C 25°C REVERSE FORWARD ICES 107 20 Figure 6. Effects of Base−Emitter Resistance TJ, JUNCTION TEMPERATURE (°C) 40 60 80 100 120 140 160 106 105 104 103 102 VCE = 30 V IC = 10 x ICES IC = 2 x ICES IC ≈ ICES (TYPICAL ICES VALUES OBTAINED FROM FIGURE 5) |
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