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2N5195 Datasheet(PDF) 1 Page - ON Semiconductor |
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2N5195 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2006 October, 2006 − Rev. 12 1 Publication Order Number: 2N5194/D 2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. Features • Pb−Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Symbol 2N5194 2N5195 Unit Collector−Emitter Voltage VCEO 60 80 Vdc Collector−Base Voltage VCB 60 80 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 40 320 W W/ °C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 °C/W THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 3.12 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC registered data. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com Preferred devices are recommended choices for future use and best overall value. 4 AMPERE POWER TRANSISTORS PNP SILICON 60 − 80 VOLTS MARKING DIAGRAM TO−225AA CASE 77−09 STYLE 1 Y = Year WW = Work Week 2N519x = Device Code x = 4 or 5 G = Pb−Free Package 2N5195 TO−225 500 Units / Bulk 2N5195G TO−225 (Pb−Free) 500 Units / Bulk Device Package Shipping 2N5194 TO−225 500 Units / Bulk 2N5194G TO−225 (Pb−Free) 500 Units / Bulk ORDERING INFORMATION YWW 2 N519xG |
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