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2N4918 Datasheet(PDF) 1 Page - ON Semiconductor |
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2N4918 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2004 July, 2004 − Rev. 11 1 Publication Order Number: 2N4918/D 2N4918 − 2N4920* Series Preferred Device Medium−Power Plastic PNP Silicon Transistors These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − V CE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construction, PD = 30 W @ TC = 25 _C • Excellent Safe Operating Area • Gain Specified to I C = 1.0 A • Complement to NPN 2N4921, 2N4922, 2N4923 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage 2N4918 2N4919 2N4920 VCEO 40 60 80 Vdc Collector − Base Voltage 2N4918 2N4919 2N4920 VCBO 40 60 80 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous (Note 1) IC (Note 2) 1.0 3.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TA = 25°C Derate above 25 °C PD 30 0.24 W W/ °C Operating and Storage Junction Temperature Range TJ, Tstg − 65 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The 1.0 A max IC value is based upon JEDEC current gain requirements. The 3.0 A max value is based upon actual current−handling capability of the device (See Figure 5). 2. Indicates JEDEC Registered Data for 2N4918 Series. THERMAL CHARACTERISTICS (Note 3) Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 4.16 °C/W 3. Recommend use of thermal compound for lowest thermal resistance. **For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3.0 A, 40−80 V, 30 W GENERAL PURPOSE POWER TRANSISTORS *Preferred devices are recommended choices for future use and best overall value. TO−225 CASE 077 STYLE 1 1 2 3 http://onsemi.com xx = 18, 19, 20 Y = Year WW = Work Week MARKING DIAGRAM YWW 2N 49xx See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION |
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