2N3906RL1G datasheet(6/7 Pages) ONSEMI

Part #	2N3906RL1G

Description	General Purpose Transistors PNP Silicon

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2N3906

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6

TYPICAL STATIC CHARACTERISTICS

Figure 13. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

2.0

0.2

0.1

0.5

2.0

3.0

10

50

70

0.2

0.3

0.1

100

1.0

0.7

200

30

20

5.0

7.0

VCE = 1.0 V

TJ = +125°C

+25

°C

−55

°C

Figure 14. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

0.5

2.0

3.0

10

0.2

0.3

0

1.0

0.7

5.0

7.0

IC = 1.0 mA

TJ = 25°C

0.07

0.05

0.03

0.02

0.01

10 mA

30 mA

100 mA

Figure 15. “ON” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

Figure 16. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

1.0

2.0

5.0

10

20

50

0

100

−0.5

0

0.5

1.0

0

60

80

120

140

160

180

20

40

100

200

−1.0

−1.5

−2.0

200

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 1.0 V

+25

°C TO +125°C

−55

°C TO +25°C

+25

°C TO +125°C

−55

°C TO +25°C

qVC FOR VCE(sat)

qVB FOR VBE(sat)

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