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2N4403 http://onsemi.com 4 Figure 5. Turn−On Time IC, COLLECTOR CURRENT (mA) 20 30 50 5.0 10 7.0 Figure 6. Rise Time IC, COLLECTOR CURRENT (mA) 70 100 10 20 50 70 100 200 300 500 30 IC/IB = 10 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 20 30 50 5.0 10 7.0 70 100 10 20 50 70 100 200 300 500 30 VCC = 30 V IC/IB = 10 Figure 7. Storage Time IC, COLLECTOR CURRENT (mA) 10 20 50 70 100 200 300 500 30 100 20 70 50 200 30 IC/IB = 10 IC/IB = 20 IB1 = IB2 ts′ = ts − 1/8 tf 6 8 10 0 4 2 0.1 2.0 5.0 10 20 50 1.0 0.5 0.2 0.01 0.02 0.05 100 Figure 8. Frequency Effects f, FREQUENCY (kHz) SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz IC = 1.0 mA, RS = 430 W IC = 500 mA, RS = 560 W IC = 50 mA, RS = 2.7 kW IC = 100 mA, RS = 1.6 kW RS = OPTIMUM SOURCE RESISTANCE 50 100 200 500 1k 2k 5k 10k 20k 50k 6 8 10 0 4 2 Figure 9. Source Resistance Effects RS, SOURCE RESISTANCE (OHMS) f = 1 kHz IC = 50 mA 100 mA 500 mA 1.0 mA |
