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1N5386BG Datasheet(PDF) 3 Page - ON Semiconductor |
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1N5386BG Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 8 page 1N5333B Series http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types) Device† (Note 1) Device Marking Zener Voltage (Note 2) Zener Impedance (Note 2) Leakage Current IR (Note 3) DVZ (Note 4) IZM (Note 5) VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR Min Nom Max mA W W mA mA Max Volts A Volts mA 1N5333B, G 1N5333B 3.14 3.3 3.47 380 3 400 1 300 1 20 0.85 1440 1N5334B, G 1N5334B 3.42 3.6 3.78 350 2.5 500 1 150 1 18.7 0.8 1320 1N5335B, G 1N5335B 3.71 3.9 4.10 320 2 500 1 50 1 17.6 0.54 1220 1N5336B, G 1N5336B 4.09 4.3 4.52 290 2 500 1 10 1 16.4 0.49 1100 1N5337B, G 1N5337B 4.47 4.7 4.94 260 2 450 1 5 1 15.3 0.44 1010 1N5338B, G 1N5338B 4.85 5.1 5.36 240 1.5 400 1 1 1 14.4 0.39 930 1N5339B, G 1N5339B 5.32 5.6 5.88 220 1 400 1 1 2 13.4 0.25 865 1N5340B, G 1N5340B 5.70 6.0 6.30 200 1 300 1 1 3 12.7 0.19 790 1N5341B, G 1N5341B 5.89 6.2 6.51 200 1 200 1 1 3 12.4 0.1 765 1N5342B, G 1N5342B 6.46 6.8 7.14 175 1 200 1 10 5.2 11.5 0.15 700 1N5343B, G 1N5343B 7.13 7.5 7.88 175 1.5 200 1 10 5.7 10.7 0.15 630 1N5344B, G 1N5344B 7.79 8.2 8.61 150 1.5 200 1 10 6.2 10 0.2 580 1N5345B, G 1N5345B 8.27 8.7 9.14 150 2 200 1 10 6.6 9.5 0.2 545 1N5346B, G 1N5346B 8.65 9.1 9.56 150 2 150 1 7.5 6.9 9.2 0.22 520 1N5347B, G 1N5347B 9.50 10 10.5 125 2 125 1 5 7.6 8.6 0.22 475 1N5348B, G 1N5348B 10.45 11 11.55 125 2.5 125 1 5 8.4 8.0 0.25 430 1N5349B, G 1N5349B 11.4 12 12.6 100 2.5 125 1 2 9.1 7.5 0.25 395 1N5350B, G 1N5350B 12.35 13 13.65 100 2.5 100 1 1 9.9 7.0 0.25 365 1N5351B, G 1N5351B 13.3 14 14.7 100 2.5 75 1 1 10.6 6.7 0.25 340 1N5352B, G 1N5352B 14.25 15 15.75 75 2.5 75 1 1 11.5 6.3 0.25 315 1N5353B, G 1N5353B 15.2 16 16.8 75 2.5 75 1 1 12.2 6.0 0.3 295 1N5354B, G 1N5354B 16.15 17 17.85 70 2.5 75 1 0.5 12.9 5.8 0.35 280 1N5355B, G 1N5355B 17.1 18 18.9 65 2.5 75 1 0.5 13.7 5.5 0.4 264 1N5356B, G 1N5356B 18.05 19 19.95 65 3 75 1 0.5 14.4 5.3 0.4 250 1N5357B, G 1N5357B 19 20 21 65 3 75 1 0.5 15.2 5.1 0.4 237 1N5358B, G 1N5358B 20.9 22 23.1 50 3.5 75 1 0.5 16.7 4.7 0.45 216 1N5359B, G 1N5359B 22.8 24 25.2 50 3.5 100 1 0.5 18.2 4.4 0.55 198 1N5360B, G 1N5360B 23.75 25 26.25 50 4 110 1 0.5 19 4.3 0.55 190 1N5361B, G 1N5361B 25.65 27 28.35 50 5 120 1 0.5 20.6 4.1 0.6 176 1N5362B, G 1N5362B 26.6 28 29.4 50 6 130 1 0.5 21.2 3.9 0.6 170 Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. 1. TOLERANCE AND TYPE NUMBER DESIGNATION The JEDEC type numbers shown indicate a tolerance of ±5%. 2. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK) Test conditions for zener voltage and impedance are as follows: IZ is applied 40 ±10 ms prior to reading. Mounting contacts are located 3/8″ to 1/2 ″ from the inside edge of mounting clips to the body of the diode (TA = 25°C +8°C, −2°C). 3. SURGE CURRENT (IR) Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located as specified in Note 2 (TA = 25°C +8°C, −2°C). 4. VOLTAGE REGULATION ( DVZ) The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50% of the IZ max value listed in the electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting contact located as specified in Note 2 (TA = 25°C +8°C, −2°C). 5. MAXIMUM REGULATOR CURRENT (IZM) The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B−suffix device. The actual IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device. TL = 75°C at 3/8″ maximum from the device body. †The “G’’ suffix indicates Pb−Free package available. |
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