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BUK436W-200A Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK436W-200A Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B Fig.13. Typical turn-on gate-charge characteristics. V GS = f(QG); conditions: ID = 19 A; parameter VDS Fig.14. Typical reverse diode current. I F = f(VSDS); conditions: VGS = 0 V; parameter Tj 0 10 20 30 40 QG / nC VGS / V 12 10 8 6 4 2 0 VDS / V =40 160 BUK456-200 0 1 2 BUK456-200A VSDS / V IF / A 40 30 20 10 0 Tj / C = 150 25 July 1997 5 Rev 1.000 |
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