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STB130NS04ZB Datasheet(PDF) 5 Page - STMicroelectronics |
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STB130NS04ZB Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 16 page STP130NS04ZB-STB130NS04ZB-STW130NS04ZB-STB130NS04ZB-1 Electrical characteristics 5/16 Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 80 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 320 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=80A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80A, di/dt = 100A/µs, VDD=25V, Tj=150°C (see Figure 15) 90 0.18 4 ns µC A |
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