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STU100N3LF3 Datasheet(PDF) 5 Page - STMicroelectronics |
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STU100N3LF3 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 15 page STD100N3LF3 - STU100N3LF3 Electrical characteristics 5/15 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD= 15V, ID= 40A, RG=4.7Ω, VGS=10V Figure 14 on page 9 9 205 31 35 ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 80 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 320 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 40A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80A, di/dt = 100A/µs, VDD = 25V, TJ = 150°C Figure 16 on page 9 40 40 2 ns µC A |
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