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ICTE-10RL4G Datasheet(PDF) 2 Page - ON Semiconductor

Part # ICTE-10RL4G
Description  1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ICTE-10RL4G Datasheet(HTML) 2 Page - ON Semiconductor

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Uni−Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
@ TL ≤ 25°C
PPK
1500
W
Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8″
Derated above TL = 75°C
PD
5.0
20
W
mW/
°C
Thermal Resistance, Junction−to−Lead
RqJL
20
°C/W
Forward Surge Current (Note 2)
@ TA = 25°C
IFSM
200
A
Operating and Storage Temperature Range
TJ, Tstg
− 65 to +175
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*Please see 1N6382 – 1N6389 (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) for Bidirectional Devices.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
QVBR
Maximum Temperature Variation of VBR
IF
Forward Current
VF
Forward Voltage @ IF


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