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GENERAL INFOMATION

Terminal Assignment

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36

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GND

PWM_BP

GND

RESET

DREG_RTN

GVDD

M3

DREG

DGND

M1

M2

DVDD

SD

DGND

OTW

GND

PWM_AP

GND

GVDD_B

GVDD_B

GND

BST_B

PVDD_B

PVDD_B

OUT_B

OUT_B

GND

GND

OUT_A

OUT_A

PVDD_A

PVDD_A

BST_A

GND

GVDD_A

GVDD_A

DKD PACKAGE

(TOP VIEW)

ABSOLUTE MAXIMUM RATINGS

TAS5121I

SLES122 – SEPTEMBER 2004

These devices have limited built-in ESD protection. The leads should be shorted together or the device

placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

The TAS5121I is offered in a thermally enhanced 36-pin PSOP3 (DKD) package. The DKD package has the

thermal pad on top.

DVDD TO DGND

–0.3 V to 4.2 V

GVDD_x TO GND

14.2 V

PVDD_X TO GND (dc voltage)

33.5 V

48 V

OUT_X TO GND (dc voltage)

33.5 V

48 V

BST_X TO GND (dc voltage)

46 V

53 V

PWM_XP, RESET, M1, M2, M3, SD, OTW

–0.3 V to DVDD + 0.3 V

Maximum junction temperature range

–40

°C to 150°C

Storage temperature

–40

°C to 125°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

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