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1N5817 Datasheet(PDF) 3 Page - ON Semiconductor |
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1N5817 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 7 page 125 115 105 95 85 75 20 15 10 7.0 5.0 4.0 3.0 2.0 ° VR, DC REVERSE VOLTAGE (VOLTS) Figure 1. Maximum Reference Temperature 1N5817 40 30 23 60 80 RqJA (°C/W) = 110 125 115 105 95 85 75 20 15 10 7.0 5.0 30 4.0 3.0 40 30 23 RqJA (°C/W) = 110 80 60 Figure 2. Maximum Reference Temperature 1N5818 125 115 105 95 85 75 20 15 10 7.0 5.0 30 4.0 40 RqJA (°C/W) = 110 60 80 Figure 3. Maximum Reference Temperature 1N5819 40 30 23 ° VR, DC REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) ° 1N5817, 1N5818, 1N5819 http://onsemi.com 3 NOTE 3. — DETERMINING MAXIMUM RATINGS Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). TA(max) = where TA(max) = TJ(max) = PF(AV) = PR(AV) = RqJA = TJ(max) − RqJAPF(AV) − RqJAPR(AV) Maximum allowable ambient temperature Maximum allowable junction temperature (1) Average forward power dissipation (125 °C or the temperature at which thermal runaway occurs, whichever is lowest) Average reverse power dissipation Junction−to−ambient thermal resistance Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2). TR = TJ(max) − RqJAPR(AV) (2) Substituting equation (2) into equation (1) yields: TA(max) = TR − RqJAPF(AV) (3) Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125°C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115 °C. The data of Figures 1, 2, and 3 is based upon dc conditions. For use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent dc voltage to use for conservative design, that is: (4) VR(equiv) = Vin(PK) x F The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. EXAMPLE: Find TA(max) for 1N5818 operated in a 12−volt dc supply using a bridge circuit with capacitive filter such that IDC = 0.4 A (IF(AV) = 0.5 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RqJA = 80°C/W. Step 1. Find VR(equiv). Read F = 0.65 from Table 1, Step 1. Find ∴ VR(equiv) = (1.41)(10)(0.65) = 9.2 V. Step 2. Find TR from Figure 2. Read TR = 109°C Step 1. Find @ VR = 9.2 V and RqJA = 80°C/W. Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 0.5 W @ I(FM) I(AV) = 10 and IF(AV) = 0.5 A. Step 4. Find TA(max) from equation (3). Step 4. Find TA(max) = 109 − (80) (0.5) = 69°C. **Values given are for the 1N5818. Power is slightly lower for the 1N5817 because of its lower forward voltage, and higher for the 1N5819. Circuit Load Half Wave Resistive Capacitive* Full Wave, Bridge Resistive Capacitive Full Wave, Center Tapped* † Resistive Capacitive Sine Wave Square Wave 0.5 0.75 1.3 1.5 0.5 0.75 0.65 0.75 1.0 1.5 1.3 1.5 **Note that VR(PK) ≈ 2.0 Vin(PK). †Use line to center tap voltage for Vin. Table 1. Values for Factor F |
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