BUK202-50Y datasheet(8/13 Pages) PHILIPS

Part #	BUK202-50Y

Description	PowerMOS transistor TOPFET high side switch

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

PowerMOS transistor

BUK202-50Y

TOPFET high side switch

Fig.16. Typical input threshold voltages.

V

IG = f(Tj); conditions VBG = 13 V, IL = 100 mA

Fig.17. Typical input clamping voltage.

V

IG = f(Tj); conditions II = 200 µA, VBG = 13 V

Fig.18. Typical status characteristic, T

j = 25 ˚C.

I

S = f(VSG); conditions VIG = VBG = 0 V

Fig.19. Typical status leakage current.

I

S = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V

Fig.20. Typical status low characteristic, T

j = 25 ˚C.

I

S = f(VSG); conditions VIG = 5 V, VBG = 13 V, IL = 0 A

Fig.21. Typical status low voltage, V

SG = f(Tj).

conditions I

S = 50 µA, VIG = 5 V, VBG = 13 V, IL = 0 A

-60

-20

20

60

100

140

180

Tj / C

VIG / V

BUK202-50Y

3.0

2.5

2.0

1.5

1.0

VIG(ON)

VIG(OFF)

-60

-20

20

60

100

140

180

Tj / C

IS

BUK202-50Y

10 uA

1 uA

100 nA

10 nA

-60

-20

20

60

100

140

180

Tj / C

VIG / V

BUK202-50Y

8.0

7.5

7.0

6.5

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

VSG / V

IS / uA

BUK202-50Y

500

400

300

200

100

0

2

4

6

8

10

VSG / V

IS / mA

BUK202-50Y

20

15

10

5

0

-60

-20

20

60

100

140

180

Tj / C

VSG / V

BUK202-50Y

1

0.8

0.6

0.4

0.2

0

April 1995

8

Rev 1.100

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BUK202-50Y Datasheet(PDF) 8 Page - NXP Semiconductors

BUK202-50Y Datasheet(HTML) 8 Page - NXP Semiconductors

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